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System Impact of Silicon Carbide
Power Electronics for Hybrid Electric Vehicles
Sponsored by Oak Ridge National Laboratory
Team
Dr. Leon M. Tolbert
Burak Ozpineci
Description
Silicon carbide power electronics devices have superior characteristics compared to conventional
silicon devices. The use of these devices will likely revolutionize
the future power electronics industry. Various Silicon carbide devices have
been developed to integrate with power systems to improve
the system performance. This project involves modeling and design of silicon
carbide devices and the study of device benefits at the system level.
Gate turn-off thyristors are investigated in a HVDC system.
The modern voltage source based converter
technology has been implemented to study the effect of silicon carbide GTO
thyristor in a HVDC system. The device loss model has been
developed based on the device physics and device operation. The conduction
and switching losses of the device have been simulated in various operating
conditions and for both silicon and silicon carbide.
The project focuses on the comparison between silicon
and silicon carbide devices in terms of efficiency, costs, operating
temperature and thermal management, and the corresponding effect on system performance.
Software
Matlab 6.1, Simulink, PSCAD 4.01.
Results
Fig 1. Device Simulation for J=200 A/Cm2, V= 5000V
Fig 2. Switching Losses of SiC GTO Thyristor
Related publications and presentations
L. M. Tolbert, B. Ozpineci, S. K. Islam F. Z. Peng,
"Impact of SiC
Power Electronic Devices for Hybrid Electric Vehicles,"
SAE 2002 Transactions Journal of Passenger Cars - Electronic and Electrical Systems,
September 2003, pp. 765-771.
B. Ozpineci, L. M. Tolbert, S. K. Islam,
"System
Level Benefits of SiC Power Devices in DC-DC Converters,"
European Conference on Power Electronics and Applications ,
September 2-4, 2003, Toulouse, France.
B. Ozpineci, L. M. Tolbert, S. K. Islam, M.
Hasanuzzaman, "System Impact of
SiC Power Devices," International Journal of High Speed
Electronics and Systems, vol. 12, no. 2, 2002, pp. 439-448.
B. Ozpineci, L. M. Tolbert, S. K. Islam, "Silicon
Carbide Power Device Characterization for HEVs,"
IEEE Workshop on Power Electronics in Transportation,
October 24-25, 2002, Auburn Hills, Michigan, pp. 93-97.
B. Ozpineci, L. M. Tolbert, S. K. Islam, M.
Hasanuzzaman, "A Parametric
Device Study for SiC Power Electronics," IEEE Industry
Applications Society Annual Meeting, October 13-17, 2002,
Pittsburgh, PA, pp. 570-575.
B. Ozpineci, L. M. Tolbert, S. K. Islam, F. Z. Peng,
"Testing,
Characterization, and Modeling of SiC Diodes for Transportation
Applications," IEEE Power Electronics Specialists Conference,
June 23-27, 2002, Cairns, Australia, pp. 1673-1678.
L. M. Tolbert, B. Ozpineci, S. K. Islam F. Z. Peng,
"Impact of SiC
Power Electronic Devices for Hybrid Electric Vehicles," 2002
Future Car Congress Proceedings, June 3-5, 2002, Arlington,
Virginia. (SAE paper number 2002-01-1904).
B. Ozpineci, L. M. Tolbert, S. K. Islam, M.
Hasanuzzaman, "Effects of
Silicon Carbide (SiC) Power Devices on PWM Inverter Losses," The
27th Annual Conference of the IEEE Industrial Electronics Society,
November 29 - December 2, 2002, Denver, Colorado, pp. 1061-1066.
Contact Informations
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