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Silicon Carbide Power Electronics For Utility Application
Team
Madhu S. Chinthavali
Dr. Leon M. Tolbert
Description
Silicon carbide power electronics devices have superior characteristics compared to conventional
silicon devices. The use of these devices will likely revolutionize
the future power electronics industry. Various Silicon carbide devices have
been developed to integrate with power systems to improve
the system performance. This project involves modeling and design of silicon
carbide devices and the study of device benefits at the system level.
Gate turn-off thyristors are investigated in a HVDC system.
The modern voltage source based converter
technology has been implemented to study the effect of silicon carbide GTO
thyristor in a HVDC system. The device loss model has been
developed based on the device physics and device operation. The conduction
and switching losses of the device have been simulated in various operating
conditions and for both silicon and silicon carbide.
The project focuses on the comparison between silicon
and silicon carbide devices in terms of efficiency, costs, operating
temperature and thermal management, and the corresponding effect on system performance.
Software
Matlab 6.1, Simulink, PSCAD 4.01.
Results
Fig 1. Device Simulation for J=200 A/Cm2, V= 5000V
Fig 2. Switching Losses of SiC GTO Thyristor
Related publications and presentations
B. Ozpineci, L. M. Tolbert, S. K. Islam, M. Chinthavali,
"Comparison of Wide Bandgap Semiconductors for Power Applications,"
10th European Conference on Power Electronics and Applications - EPE 2003,
September 2-4, 2003, Toulouse, France.
B. Ozpineci, L. M. Tolbert, S. K. Islam, M. Chinthavali,
"Wide Bandgap Semiconductors for Utility Applications,"
IASTED International Conference on Power and Energy Systems (PES 2003), February
24-26, 2003, Palm Springs, California, pp. 317-321.
"Silicon Carbide for Utility Application"
Contact Informations
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